Silva, C. B. d. C. e., Marozzo, G., Da Molin, G., Hollar, J., Gallinaro, M., Khakzad, M., . . . Shchelina, K. (2024). Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons.
Citazione stile Chigago Style (17a edizione)Silva, C. Beirão da Cruz e., G. Marozzo, G. Da Molin, J. Hollar, M. Gallinaro, M. Khakzad, S. Bashiri Kahjoq, e K. Shchelina. Properties of Carbon-infused Silicon LGAD Devices After Non-uniform Irradiation with 24 GeV/c Protons. 2024.
Citatione MLA (9a ed.)Silva, C. Beirão da Cruz e., et al. Properties of Carbon-infused Silicon LGAD Devices After Non-uniform Irradiation with 24 GeV/c Protons. 2024.
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