APA (7th ed.) Citation

Silva, C. B. d. C. e., Marozzo, G., Da Molin, G., Hollar, J., Gallinaro, M., Khakzad, M., . . . Shchelina, K. (2024). Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons.

Chicago Style (17th ed.) Citation

Silva, C. Beirão da Cruz e., G. Marozzo, G. Da Molin, J. Hollar, M. Gallinaro, M. Khakzad, S. Bashiri Kahjoq, and K. Shchelina. Properties of Carbon-infused Silicon LGAD Devices After Non-uniform Irradiation with 24 GeV/c Protons. 2024.

MLA (9th ed.) Citation

Silva, C. Beirão da Cruz e., et al. Properties of Carbon-infused Silicon LGAD Devices After Non-uniform Irradiation with 24 GeV/c Protons. 2024.