Imagen de Portada

The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Barneo, Didac, Ramos, Rafael, Romero, Hugo, Leboran, Victor, Varela-Dominguez, Noa, Pardo, Jose A., Rivadulla, Francisco, Langenberg, Eric
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
por: Zhou, Chao, et al.
Publicado: (2026)

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
por: Zhou, Chao, et al.
Publicado: (2025)

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition
por: Kumar, Deepak
Publicado: (2024)

Unveiling structure-property correlations in ferroelectric $Hf_{0.5}Zr_{0.5}O_2$ films using variational autoencoders
por: Alhada-Lahbabi, Kévin, et al.
Publicado: (2025)

Superconducting Properties of Re 2 Zr 0.5 Hf 0.5 and Re 6 Zr 0.5 Hf 0.5 Alloys
por: Pavan Kumar Meena, et al.
Publicado: (2026)

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography
por: Gao1, Xiaoyue, et al.
Publicado: (2024)

Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials
por: Zalyalov, Timur M., et al.
Publicado: (2022)

Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
por: Presas, Priscila A. Tapia, et al.
Publicado: (2026)

Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
por: Li, Xinye, et al.
Publicado: (2024)

The Coupling of Ferroelectric Polarization and Oxygen Vacancy Migration Enables Electrically Controlled Thermal Memories
por: Dídac Barneo, et al.
Publicado: (2026)

Transformation of Oxidation Mechanism in HfZrTiTa 0.5 Al 0.5 RHEA
por: Zheng Tian, et al.
Publicado: (2026)

Resistive switching and charge accumulation in Hf0.5Zr0.5O2 nanoparticles
por: Pylypchuk, Oleksandr S., et al.
Publicado: (2025)

Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
por: Kun Chen, et al.
Publicado: (2024)

Fast Switching and High Polarization in Ferroelectric Hf 0.5 Zr 0.5 O 2 Films
por: Faizan Ali, et al.
Publicado: (2026)

Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
por: Kim, Tae Ryong, et al.
Publicado: (2024)

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films
por: Jung Woo Cho, et al.
Publicado: (2024)

Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
por: Zagorodniy, Yuriy O., et al.
Publicado: (2026)

Pulse‐Width‐Dependent Imprint Effect in Ferroelectric Hf 0.5 Zr 0.5 O 2 Capacitors
por: Minjong Lee, et al.
Publicado: (2025)

Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$
por: Beechem, Thomas E, et al.
Publicado: (2024)

Microstructure and Mechanical Properties of TiZrHfCu0.5W0.5 Refractory High‐Entropy Alloy
por: Hao Luo, et al.
Publicado: (2025)

Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3
por: Sean R. Bishop, et al.
Publicado: (2024)

Multiple spiking functionalities in annealing-optimized Ag/Hf$_{0.5}$Zr$_{0.5}$O$_2$-based memristive neurons
por: Zhidkov, Nikita, et al.
Publicado: (2026)

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf 0.5 Zr 0.5 O 2 Capacitors and Characterization
por: Zichong Zhang, et al.
Publicado: (2026)

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films in Relation to Microstructure
por: Maximilian T. Becker, et al.
Publicado: (2026)

Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf0.5Zr0.5O2 Libraries
por: Liu, Yu, et al.
Publicado: (2026)

Revealing the Role of Spacer Layer in Domain Dynamics of Hf0.5Zr0.5O2 Thin Films for Ferroelectrics
por: Ren‐Ci Peng, et al.
Publicado: (2024)

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue
por: Zimeng Zhang, et al.
Publicado: (2024)

Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2‐Based Ferroelectric Tunnel Junctions for Neuromorphic Applications
por: Juri Kim, et al.
Publicado: (2024)

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field‐effect transistors using 3‐nm ferroelectric Hf 0.5 Zr 0.5 O 2
por: Zhao‐Hao Zhang, et al.
Publicado: (2024)

Tracking visible pulsed laser annealing of Hf$_{0.5}$Zr$_{0.5}$O$_2$ heterostructures with in situ transmission electron microscopy
por: Amini, Aida, et al.
Publicado: (2026)

Rhombohedral R3 Phase of Mn‐Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity
por: Jiasheng Guo, et al.
Publicado: (2024)

Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films
por: Sang Won An, et al.
Publicado: (2024)

Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition
por: Chihwan An, et al.
Publicado: (2024)

History-dependent and frequency-dependent dielectric nonlinearities induced by polar nanoregions in a thin film of 0.5 ( Ba 0.7 Ca 0.3 TiO 3 ) -- 0.5 ( BaZr 0.2 Ti 0.8 O 3 )
por: Nadaud, Kevin, et al.
Publicado: (2025)

Impact of PbZr0.5Ti0.5O3 Particle Size on the Ferroelectric and Magnetoelectric Properties of Mn0.5Zn0.5Fe2O4–PbZr0.5Ti0.5O3 Multiferroic Fluids
por: Hong Ao, et al.
Publicado: (2024)

New Insights of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors
por: Flavien Berthaud, et al.
Publicado: (2025)

Piezostrain-induced in-plane anisotropy of superconducting transition temperature for FeSe0.5Te0.5 thin films
por: Mi, Shu, et al.
Publicado: (2023)

A Novel Methodology of Visualizing Orthorhombic Phase Uniformity in Ferroelectric Hf0.5Zr0.5O2 Devices Using Piezoresponse Force Microscopy
por: Peng, Wei-Cheng, et al.
Publicado: (2025)

ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
por: Afroze, Nashrah, et al.
Publicado: (2026)

Synthesis of novel multi‐anion Hf0.8Zr0.2B0.1C0.5N0.4 powder
por: Xiaoyu Wang, et al.
Publicado: (2025)