Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866915242576969728 |
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| author | Guerguis, Bavley Cuduvally, Ramya Ost, Alexander Ghorbani, Morvarid Rashid, Sabaa Machado, Wilson McGrath, Dan Pawlowicz, Chris Langelier, Brian Bassim, Nabil |
| author_facet | Guerguis, Bavley Cuduvally, Ramya Ost, Alexander Ghorbani, Morvarid Rashid, Sabaa Machado, Wilson McGrath, Dan Pawlowicz, Chris Langelier, Brian Bassim, Nabil |
| contents | The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate structural layout and varying doping types/concentration levels, this device is representative of the current challenges faced in measuring dopants within confined volumes using conventional techniques. Focused ion beam-secondary ion mass spectrometry is applied to produce large-area compositional maps with a sub-20 nm resolution, while atom probe tomography is used to extract atomic-scale quantitative dopant profiles. Leveraging the complementary capabilities of the two methods, this workflow is shown to be an effective approach for resolving nano- and micro- scale dopant information, crucial for optimizing the performance and reliability of advanced semiconductor devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_08980 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography Guerguis, Bavley Cuduvally, Ramya Ost, Alexander Ghorbani, Morvarid Rashid, Sabaa Machado, Wilson McGrath, Dan Pawlowicz, Chris Langelier, Brian Bassim, Nabil Applied Physics Materials Science The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate structural layout and varying doping types/concentration levels, this device is representative of the current challenges faced in measuring dopants within confined volumes using conventional techniques. Focused ion beam-secondary ion mass spectrometry is applied to produce large-area compositional maps with a sub-20 nm resolution, while atom probe tomography is used to extract atomic-scale quantitative dopant profiles. Leveraging the complementary capabilities of the two methods, this workflow is shown to be an effective approach for resolving nano- and micro- scale dopant information, crucial for optimizing the performance and reliability of advanced semiconductor devices. |
| title | Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2501.08980 |