Citazione Stile APA (7a Edizione)

Tiagulskyi, S., Yatskiv, R., Sobanska, M., Olszewski, K., Zytkiewicz, Z. R., & Grym, J. (2025). ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires.

Citazione stile Chigago Style (17a edizione)

Tiagulskyi, Stanislav, Roman Yatskiv, Marta Sobanska, Karol Olszewski, Zbigniew R. Zytkiewicz, e Jan Grym. ZrN Nucleation Layer Provides Backside Ohmic Contact to MBE-grown GaN Nanowires. 2025.

Citatione MLA (9a ed.)

Tiagulskyi, Stanislav, et al. ZrN Nucleation Layer Provides Backside Ohmic Contact to MBE-grown GaN Nanowires. 2025.