Wendoloski, J. P., Hillier, J., Liles, S. D., Rendell, M., Ashlea-Alava, Y., Raes, B., . . . Hamilton, A. R. (2025). Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs.
Chicago-Zitierstil (17. Ausg.)Wendoloski, J. P., et al. Holes in Silicon Are Heavier than Expected: Transport Properties of Extremely High Mobility Electrons and Holes in Silicon MOSFETs. 2025.
MLA-Zitierstil (9. Ausg.)Wendoloski, J. P., et al. Holes in Silicon Are Heavier than Expected: Transport Properties of Extremely High Mobility Electrons and Holes in Silicon MOSFETs. 2025.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.