Lee, C., Egbo, K., Garrity, E., Jankousky, M., Garland, H., Zakutayev, A., & Stevanović, V. (2025). Stability, growth, and doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as promising n-type wide-gap semiconductors.
Chicago Style (17th ed.) CitationLee, Cheng-Wei, Kingsley Egbo, Emily Garrity, Matthew Jankousky, Henry Garland, Andriy Zakutayev, and Vladan Stevanović. Stability, Growth, and Doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as Promising N-type Wide-gap Semiconductors. 2025.
MLA (9th ed.) CitationLee, Cheng-Wei, et al. Stability, Growth, and Doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as Promising N-type Wide-gap Semiconductors. 2025.
Warning: These citations may not always be 100% accurate.