Cita APA (7a ed.)

Ellis, H., Jia, W., Rahaman, I., Hillas, A., Li, B., Scarpulla, M. A., . . . Fu, K. (2025). Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C.

Cita Chicago Style (17a ed.)

Ellis, Hunter, Wei Jia, Imteaz Rahaman, Apostoli Hillas, Botong Li, Michael A. Scarpulla, Berardi Sensale Rodriguez, y Kai Fu. Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures Up to 500 °C. 2025.

Cita MLA (9a ed.)

Ellis, Hunter, et al. Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures Up to 500 °C. 2025.