Ellis, H., Jia, W., Rahaman, I., Hillas, A., Li, B., Scarpulla, M. A., . . . Fu, K. (2025). Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C.
Style de citation Chicago (17e éd.)Ellis, Hunter, Wei Jia, Imteaz Rahaman, Apostoli Hillas, Botong Li, Michael A. Scarpulla, Berardi Sensale Rodriguez, et Kai Fu. Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures Up to 500 °C. 2025.
Style de citation MLA (9e éd.)Ellis, Hunter, et al. Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures Up to 500 °C. 2025.
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