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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.21265 |
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| _version_ | 1866908343789944832 |
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| author | Yang, Dongxun Masayoshi, Tonouchi |
| author_facet | Yang, Dongxun Masayoshi, Tonouchi |
| contents | Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_21265 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES) Yang, Dongxun Masayoshi, Tonouchi Applied Physics Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model. |
| title | Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES) |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2504.21265 |