Ha, J., Choi, M., Yang, J., & Kim, C. (2025). Scalable thru-hole epitaxy of GaN through self-adjusting $h$-BN masks via solution-processed 2D stacks.
Chicago Style (17th ed.) CitationHa, Jongwoo, Minah Choi, Jieun Yang, and Chinkyo Kim. Scalable Thru-hole Epitaxy of GaN Through Self-adjusting $h$-BN Masks via Solution-processed 2D Stacks. 2025.
MLA (9th ed.) CitationHa, Jongwoo, et al. Scalable Thru-hole Epitaxy of GaN Through Self-adjusting $h$-BN Masks via Solution-processed 2D Stacks. 2025.
Warning: These citations may not always be 100% accurate.