Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2506.14945 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909651881164800 |
|---|---|
| author | Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Roeder, Christian Beyer, Franziska C. Schueler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel |
| author_facet | Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Roeder, Christian Beyer, Franziska C. Schueler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel |
| contents | With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a contactless characterization. In this work, we simultaneously determine the charge carrier density of SiC epilayers and their substrates in a single measurement over a wide range of about 8x10^(15)$ cm^(-3) to 4x10^(18) cm^(-3) using time-domain spectroscopy in a reflection geometry. Furthermore, inhomogeneities in the samples are detected by mapping the determined charge carrier densities over the whole wafer. Additional theoretical calculations confirm these results and provide thickness-dependent information on the doping range of 4H-SiC, in which terahertz time-domain spectroscopy is capable of determining the charge carrier density. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_14945 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy Hennig, Joshua Klier, Jens Duran, Stefan Hsu, Kuei-Shen Beyer, Jan Roeder, Christian Beyer, Franziska C. Schueler, Nadine Vieweg, Nico Dutzi, Katja von Freymann, Georg Molter, Daniel Optics With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a contactless characterization. In this work, we simultaneously determine the charge carrier density of SiC epilayers and their substrates in a single measurement over a wide range of about 8x10^(15)$ cm^(-3) to 4x10^(18) cm^(-3) using time-domain spectroscopy in a reflection geometry. Furthermore, inhomogeneities in the samples are detected by mapping the determined charge carrier densities over the whole wafer. Additional theoretical calculations confirm these results and provide thickness-dependent information on the doping range of 4H-SiC, in which terahertz time-domain spectroscopy is capable of determining the charge carrier density. |
| title | Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy |
| topic | Optics |
| url | https://arxiv.org/abs/2506.14945 |