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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2506.18025 |
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| _version_ | 1866909965809090560 |
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| author | Fornos, C. Alyabyeva, N. Ho, W. Y. Roubert, C. Tak, T. Speck, J. S. Weisbuch, C. Peretti, J. Rowe, A. C. H. |
| author_facet | Fornos, C. Alyabyeva, N. Ho, W. Y. Roubert, C. Tak, T. Speck, J. S. Weisbuch, C. Peretti, J. Rowe, A. C. H. |
| contents | Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices containing V-defects. Numerical modeling suggests this may be due to reduced barrier heights for charge injection in thinned, low-Indium quantum wells parallel to semi-polar V-defect facets. To test this proposition, a novel approach in which the tip of a scanning tunneling luminescence microscope as a local hole injector, is used to map the optoelectronic properties of commercial, green-emitting LED heterostructures around V-defects with nanoscale spatial resolution. A 1 V reduction in the forward bias necessary for current injection at V-defect rims is observed. This, combined with the observation of small (~10 meV) blue shifts in the locally emitted electroluminescence, unambiguously confirms the charge injection mechanism. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_18025 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs Fornos, C. Alyabyeva, N. Ho, W. Y. Roubert, C. Tak, T. Speck, J. S. Weisbuch, C. Peretti, J. Rowe, A. C. H. Applied Physics Materials Science Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices containing V-defects. Numerical modeling suggests this may be due to reduced barrier heights for charge injection in thinned, low-Indium quantum wells parallel to semi-polar V-defect facets. To test this proposition, a novel approach in which the tip of a scanning tunneling luminescence microscope as a local hole injector, is used to map the optoelectronic properties of commercial, green-emitting LED heterostructures around V-defects with nanoscale spatial resolution. A 1 V reduction in the forward bias necessary for current injection at V-defect rims is observed. This, combined with the observation of small (~10 meV) blue shifts in the locally emitted electroluminescence, unambiguously confirms the charge injection mechanism. |
| title | Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2506.18025 |