Style de citation APA (7e éd.)

Funaki, N., Sugiyama, K., Uemoto, M., & Ono, T. (2025). Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface.

Style de citation Chicago (17e éd.)

Funaki, Nahoto, Kosei Sugiyama, Mitsuharu Uemoto, et Tomoya Ono. Density Functional Theory Study of Effect of NO Annealing on Electronic Structure and Carrier-scattering Property of 4H-SiC(0001)/SiO$_2$ Interface. 2025.

Style de citation MLA (9e éd.)

Funaki, Nahoto, et al. Density Functional Theory Study of Effect of NO Annealing on Electronic Structure and Carrier-scattering Property of 4H-SiC(0001)/SiO$_2$ Interface. 2025.