APA (7th ed.) Citation

Martín-Encinar, L., Marqués, L. A., Santos, I., & Pelaz, L. (2025). Atomistic study of dislocation formation during Ge epitaxy on Si.

Chicago Style (17th ed.) Citation

Martín-Encinar, Luis, Luis A. Marqués, Iván Santos, and Lourdes Pelaz. Atomistic Study of Dislocation Formation During Ge Epitaxy on Si. 2025.

MLA (9th ed.) Citation

Martín-Encinar, Luis, et al. Atomistic Study of Dislocation Formation During Ge Epitaxy on Si. 2025.