Style de citation APA (7e éd.)

Karapetyan, S., Zeltmann, S. E., Wilk, G., Chen, T., Hou, V. D. -., & Muller, D. A. (2025). 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography.

Style de citation Chicago (17e éd.)

Karapetyan, Shake, Steven E. Zeltmann, Glen Wilk, Ta-Kun Chen, Vincent D. -H Hou, et David A. Muller. 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography. 2025.

Style de citation MLA (9e éd.)

Karapetyan, Shake, et al. 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography. 2025.