Style de citation APA (7e éd.)

An, H., Oh, S., Lee, D., Ko, J., Oh, D., Hong, C., & Han, S. (2025). Etching-to-deposition transition in SiO$_2$/Si$_3$N$_4$ using CH$_x$F$_y$ ion-based plasma etching: An atomistic study with neural network potentials.

Style de citation Chicago (17e éd.)

An, Hyungmin, Sangmin Oh, Dongheon Lee, Jae-hyeon Ko, Dongyean Oh, Changho Hong, et Seungwu Han. Etching-to-deposition Transition in SiO$_2$/Si$_3$N$_4$ Using CH$_x$F$_y$ Ion-based Plasma Etching: An Atomistic Study with Neural Network Potentials. 2025.

Style de citation MLA (9e éd.)

An, Hyungmin, et al. Etching-to-deposition Transition in SiO$_2$/Si$_3$N$_4$ Using CH$_x$F$_y$ Ion-based Plasma Etching: An Atomistic Study with Neural Network Potentials. 2025.