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Etching-to-deposition transition in SiO$_2$/Si$_3$N$_4$ using CH$_x$F$_y$ ion-based plasma etching: An atomistic study with neural network potentials

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	An, Hyungmin, Oh, Sangmin, Lee, Dongheon, Ko, Jae-hyeon, Oh, Dongyean, Hong, Changho, Han, Seungwu
Format:	Preprint
Publié:	2025
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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