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Etching-to-deposition transition in SiO$_2$/Si$_3$N$_4$ using CH$_x$F$_y$ ion-based plasma etching: An atomistic study with neural network potentials

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	An, Hyungmin, Oh, Sangmin, Lee, Dongheon, Ko, Jae-hyeon, Oh, Dongyean, Hong, Changho, Han, Seungwu
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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