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| Hauptverfasser: | , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Online-Zugang: | https://arxiv.org/abs/2508.01707 |
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| _version_ | 1866913972864679936 |
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| author | Peng, Wei-Cheng Liu, Hsien-Yang Yu, Cheng-Yu Useinov, Artur Wu, Tian-Li |
| author_facet | Peng, Wei-Cheng Liu, Hsien-Yang Yu, Cheng-Yu Useinov, Artur Wu, Tian-Li |
| contents | Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films are promising for next-generation memory and logic devices due to their CMOS compatibility and scalability. The spatial uniformity of the orthorhombic (O) phase is crucial for optimizing ferroelectric properties like remnant polarization. This work introduces a novel piezoresponse force microscopy (PFM) approach for 2D mapping of O-phase uniformity in HZO films (5 nm, 9 nm, and 20 nm), further quantifing O-phase distribution by distinguishing polarized O-phase regions from non-polarized tetragonal/monoclinic (T/M) phases. Our results reveal that the 9 nm film exhibits the most uniform O-phase and highest remnant polarization. This PFM-based method enables comprehensive phase characterization without requiring complicated facilities, broadening access to phase analysis and advancing ferroelectric thin-film research for memory and logic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_01707 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A Novel Methodology of Visualizing Orthorhombic Phase Uniformity in Ferroelectric Hf0.5Zr0.5O2 Devices Using Piezoresponse Force Microscopy Peng, Wei-Cheng Liu, Hsien-Yang Yu, Cheng-Yu Useinov, Artur Wu, Tian-Li Materials Science Applied Physics Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films are promising for next-generation memory and logic devices due to their CMOS compatibility and scalability. The spatial uniformity of the orthorhombic (O) phase is crucial for optimizing ferroelectric properties like remnant polarization. This work introduces a novel piezoresponse force microscopy (PFM) approach for 2D mapping of O-phase uniformity in HZO films (5 nm, 9 nm, and 20 nm), further quantifing O-phase distribution by distinguishing polarized O-phase regions from non-polarized tetragonal/monoclinic (T/M) phases. Our results reveal that the 9 nm film exhibits the most uniform O-phase and highest remnant polarization. This PFM-based method enables comprehensive phase characterization without requiring complicated facilities, broadening access to phase analysis and advancing ferroelectric thin-film research for memory and logic applications. |
| title | A Novel Methodology of Visualizing Orthorhombic Phase Uniformity in Ferroelectric Hf0.5Zr0.5O2 Devices Using Piezoresponse Force Microscopy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2508.01707 |