Virtual Sensing for Solder Layer Degradation and Temperature Monitoring in IGBT Modules

Fuente: arXiv
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Auteurs principaux: Urgolo, Andrea, Stipsitz, Monika, Sanchis-Alepuz, Hèlios
Format: Preprint
Publié: 2025
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_version_ 1866915877089181696
author Urgolo, Andrea
Stipsitz, Monika
Sanchis-Alepuz, Hèlios
author_facet Urgolo, Andrea
Stipsitz, Monika
Sanchis-Alepuz, Hèlios
contents Monitoring the degradation state of Insulated Gate Bipolar Transistor (IGBT) modules is essential for ensuring the reliability and longevity of power electronic systems, especially in safety-critical and high-performance applications. However, direct measurement of key degradation indicators - such as junction temperature, solder fatigue or delamination - remains challenging due to the physical inaccessibility of internal components and the harsh environment. In this context, machine learning-based virtual sensing offers a promising alternative by bridging the gap from feasible sensor placement to the relevant but inaccessible locations. This paper explores the feasibility of estimating the degradation state of solder layers, and the corresponding full temperature maps based on a limited number of physical sensors. Based on synthetic data of a specific degradation mode, we obtain a high accuracy in the estimation of the degraded solder area (1.17% mean absolute error), and are able to reproduce the surface temperature of the IGBT with a maximum relative error of 4.56% (corresponding to an average relative error of 0.37%).
format Preprint
id arxiv_https___arxiv_org_abs_2508_10515
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Virtual Sensing for Solder Layer Degradation and Temperature Monitoring in IGBT Modules
Urgolo, Andrea
Stipsitz, Monika
Sanchis-Alepuz, Hèlios
Computational Physics
Computational Engineering, Finance, and Science
Machine Learning
Systems and Control
Monitoring the degradation state of Insulated Gate Bipolar Transistor (IGBT) modules is essential for ensuring the reliability and longevity of power electronic systems, especially in safety-critical and high-performance applications. However, direct measurement of key degradation indicators - such as junction temperature, solder fatigue or delamination - remains challenging due to the physical inaccessibility of internal components and the harsh environment. In this context, machine learning-based virtual sensing offers a promising alternative by bridging the gap from feasible sensor placement to the relevant but inaccessible locations. This paper explores the feasibility of estimating the degradation state of solder layers, and the corresponding full temperature maps based on a limited number of physical sensors. Based on synthetic data of a specific degradation mode, we obtain a high accuracy in the estimation of the degraded solder area (1.17% mean absolute error), and are able to reproduce the surface temperature of the IGBT with a maximum relative error of 4.56% (corresponding to an average relative error of 0.37%).
title Virtual Sensing for Solder Layer Degradation and Temperature Monitoring in IGBT Modules
topic Computational Physics
Computational Engineering, Finance, and Science
Machine Learning
Systems and Control
url https://arxiv.org/abs/2508.10515