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| Autori principali: | , , , , , , , , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2510.23139 |
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| _version_ | 1866908634978451456 |
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| author | Geng, Yanyan Li, Chang Mi, Shuo Wang, Manyu Han, Xinen Hu, Huiji Wang, Yunzhen You, Haojie Meng, Shumin Wu, Hanxiang Guo, Jianfeng Zhu, Shiyu Li, Yanjun Sugawara, Yasuhiro Hussain, Sabir Pang, Fei Xu, Rui Cheng, Zhihai |
| author_facet | Geng, Yanyan Li, Chang Mi, Shuo Wang, Manyu Han, Xinen Hu, Huiji Wang, Yunzhen You, Haojie Meng, Shumin Wu, Hanxiang Guo, Jianfeng Zhu, Shiyu Li, Yanjun Sugawara, Yasuhiro Hussain, Sabir Pang, Fei Xu, Rui Cheng, Zhihai |
| contents | The delicate interfacial conditions and behaviors play critical roles in determining the valuable physical properties of two-dimensional materials and their heterostructures on substrates. However, directly probing these complex interface conditions remains challenging. Here, we reveal the coupled in-plane strain and out-of-plane bonding conditions in strain-engineered WS2 flakes by combining dual-harmonic electrostatic force microscopy (DH-EFM) and scanning microwave impedance microscopy (sMIM). A striking contradiction is observed between the compressive-strain-induced larger bandgap (lower electrical conductivity) detected by DH-EFM, and the enhanced conductivity probed by sMIM. Comparative measurements under different sMIM modes demonstrate that this contradiction originates from a tip-loading-force-induced dynamic puckering effect, which is governed by the interfacial bonding strength. Furthermore, the progressive accumulation and subsequent release of conductivity during forward/backward sMIM-contact scans further confirms this dynamic puckering behavior, revealing pronounced differences in interface conditions between the open- and closed-ring regions of WS2. This work resolves the correlation between electrical properties and interface conditions, and provides fundamental insights for interface-engineered devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_23139 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unveiling the delicate "hidden" interface conditions in WS2 flakes by advanced atomic force microscopy Geng, Yanyan Li, Chang Mi, Shuo Wang, Manyu Han, Xinen Hu, Huiji Wang, Yunzhen You, Haojie Meng, Shumin Wu, Hanxiang Guo, Jianfeng Zhu, Shiyu Li, Yanjun Sugawara, Yasuhiro Hussain, Sabir Pang, Fei Xu, Rui Cheng, Zhihai Materials Science The delicate interfacial conditions and behaviors play critical roles in determining the valuable physical properties of two-dimensional materials and their heterostructures on substrates. However, directly probing these complex interface conditions remains challenging. Here, we reveal the coupled in-plane strain and out-of-plane bonding conditions in strain-engineered WS2 flakes by combining dual-harmonic electrostatic force microscopy (DH-EFM) and scanning microwave impedance microscopy (sMIM). A striking contradiction is observed between the compressive-strain-induced larger bandgap (lower electrical conductivity) detected by DH-EFM, and the enhanced conductivity probed by sMIM. Comparative measurements under different sMIM modes demonstrate that this contradiction originates from a tip-loading-force-induced dynamic puckering effect, which is governed by the interfacial bonding strength. Furthermore, the progressive accumulation and subsequent release of conductivity during forward/backward sMIM-contact scans further confirms this dynamic puckering behavior, revealing pronounced differences in interface conditions between the open- and closed-ring regions of WS2. This work resolves the correlation between electrical properties and interface conditions, and provides fundamental insights for interface-engineered devices. |
| title | Unveiling the delicate "hidden" interface conditions in WS2 flakes by advanced atomic force microscopy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.23139 |