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Bibliographische Detailangaben
Hauptverfasser: Geng, Yanyan, Li, Chang, Mi, Shuo, Wang, Manyu, Han, Xinen, Hu, Huiji, Wang, Yunzhen, You, Haojie, Meng, Shumin, Wu, Hanxiang, Guo, Jianfeng, Zhu, Shiyu, Li, Yanjun, Sugawara, Yasuhiro, Hussain, Sabir, Pang, Fei, Xu, Rui, Cheng, Zhihai
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2510.23139
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Inhaltsangabe:
  • The delicate interfacial conditions and behaviors play critical roles in determining the valuable physical properties of two-dimensional materials and their heterostructures on substrates. However, directly probing these complex interface conditions remains challenging. Here, we reveal the coupled in-plane strain and out-of-plane bonding conditions in strain-engineered WS2 flakes by combining dual-harmonic electrostatic force microscopy (DH-EFM) and scanning microwave impedance microscopy (sMIM). A striking contradiction is observed between the compressive-strain-induced larger bandgap (lower electrical conductivity) detected by DH-EFM, and the enhanced conductivity probed by sMIM. Comparative measurements under different sMIM modes demonstrate that this contradiction originates from a tip-loading-force-induced dynamic puckering effect, which is governed by the interfacial bonding strength. Furthermore, the progressive accumulation and subsequent release of conductivity during forward/backward sMIM-contact scans further confirms this dynamic puckering behavior, revealing pronounced differences in interface conditions between the open- and closed-ring regions of WS2. This work resolves the correlation between electrical properties and interface conditions, and provides fundamental insights for interface-engineered devices.