Dastider, A. G., Grupen, M., Tunga, A., & Rakheja, S. (2025). Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime.
Chicago Style (17th ed.) CitationDastider, Ankan Ghosh, Matt Grupen, Ashwin Tunga, and Shaloo Rakheja. Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime. 2025.
MLA (9th ed.) CitationDastider, Ankan Ghosh, et al. Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime. 2025.
Warning: These citations may not always be 100% accurate.