:: Library Catalog

Cover Image

Saved in:

Bibliographic Details
Main Authors:	Dastider, Ankan Ghosh, Grupen, Matt, Tunga, Ashwin, Rakheja, Shaloo
Format:	Preprint
Published:	2025
Subjects:	Applied Physics
Online Access:	https://arxiv.org/abs/2512.06226
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
by: Dastider, Ankan Ghosh, et al.
Published: (2026)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
by: Raychaudhuri, Jagori, et al.
Published: (2023)

Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
by: Afrid, Sheikh Mohd Ta-Seen, et al.
Published: (2025)

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)

Frequency multiplication in Terahertz band using AlGaN/GaN plasmonic crystals
by: Shur, Michael, et al.
Published: (2025)

InGaN Nanopixel Arrays on Single Crystal GaN Substrate
by: Anand, Nirmal, et al.
Published: (2025)

Fokker--Planck framework for stochastic octupole moment dynamics in chiral antiferromagnet Mn3Sn
by: Qian, Siyuan, et al.
Published: (2026)

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
by: Xia, Zhanbo, et al.
Published: (2024)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
by: Orfao, B., et al.
Published: (2026)

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
by: Cao, Can, et al.
Published: (2026)

Simplified EPFL GaN HEMT Model
by: Jazaeri, Farzan, et al.
Published: (2024)

On Apparent Absence of Green Gap in InGaN/GaN Quantum Disks and Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
by: Sadaf, Sharif Md., et al.
Published: (2025)

High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
by: Kumawat, Kishan Lal, et al.
Published: (2025)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)

Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2023)

Enhancing Hole Mobility in Monolayer $WSe_{2}$ p-FETs via Process-Induced Compression
by: Zhao, He Lin, et al.
Published: (2025)

Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)

Frequency-Resolved Forward Capacitance in GaN-based LEDs
by: Li, Yuchen, et al.
Published: (2024)

Polarity-induced selective area epitaxy of GaN nanowires
by: Schiaber, Ziani de Souza, et al.
Published: (2024)

Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs
by: Shen, Yang, et al.
Published: (2023)

3 kV Monolithic Bidirectional GaN HEMT on Sapphire
by: Alam, Md Tahmidul, et al.
Published: (2024)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

Impact of strain on the SOT-driven dynamics of thin film Mn$_3$Sn
by: Shukla, Ankit, et al.
Published: (2023)

Influence of thermal noise on the field-driven dynamics of the non-collinear antiferromagnet Mn3Sn
by: Qian, Siyuan, et al.
Published: (2025)

Spintronic devices and applications using noncollinear chiral antiferromagnets
by: Shukla, Ankit, et al.
Published: (2024)

Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
by: Li, Xuefeng, et al.
Published: (2025)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)

Mg-doping and free-hole properties of hot-wall MOCVD GaN
by: Papamichail, Alexis, et al.
Published: (2022)

Spectral and Small-Signal Electroluminescence Analysis of Carrier Dynamics in Dual-Color InGaN/GaN Light-Emitting Diodes
by: Li, Xuefeng, et al.
Published: (2026)

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
by: Rehman, A., et al.
Published: (2026)

Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si
by: Wang, Yu-Xuan, et al.
Published: (2024)

Control of Electrohydrodynamic‐Induced Defects in Nanoimprinted Nanopillars for Optimized GaN Pendeoepitaxy
by: N. Labchir, et al.
Published: (2025)

An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
by: Kawamura, Fumio, et al.
Published: (2026)

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
by: Cardinael, Pieter, et al.
Published: (2024)

On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
by: Duraz, Jules, et al.
Published: (2024)

Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
by: Bhunia, Swagata, et al.
Published: (2024)

Three-dimensional imaging of threading dislocations in GaN by multimodal stimulated Raman scattering microscopy
by: Takahashi, Shun, et al.
Published: (2025)

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
by: Bai, Ruixin, et al.
Published: (2025)