Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2512.09391 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the detailed electrical properties such as leakage current, CV profiles, dielectric constant, frequency dispersion was reported from fabricated MOSCAP structures. The leakage current was negligible (under noise-level of tool) up to 6 V and 11 V for 50 nm and 200 nm STO membrane respectively A high-quality dielectric was indicated by the CV profile, which showed almost negligible frequency dispersion in the frequency range of 10 kHz to 500 kHz. The dielectric constant was 50 to 82 with the 50 nm thick STO membrane and 115 to 186 in the 200 nm thick STO membrane. Thermal annealing of the membrane in ambient conditions at 250 degrees for 2 hours led to a slight improvement in the dielectric constant (8 to 20 percent), albeit at the expense of degraded leakage current performance, as indicated by a reduction of 1 V to 3 V in the "no leakage region" of the IV curves after annealing. The possible physical mechanisms responsible for these changes were also analyzed and discussed.