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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2512.22505 |
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| _version_ | 1866914221926645760 |
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| author | Song, Taeyoung Kang, Sanghyun Kuo, Yu Hsin Chen, Jiayi Fernandes, Lance Afroze, Nashrah Tian, Mengkun Baac, Hyoung Won Shin, Changhwan Khan, Asif Islam |
| author_facet | Song, Taeyoung Kang, Sanghyun Kuo, Yu Hsin Chen, Jiayi Fernandes, Lance Afroze, Nashrah Tian, Mengkun Baac, Hyoung Won Shin, Changhwan Khan, Asif Islam |
| contents | Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibility with RMG-like high-temperature processing, (ii) sufficient Vth tunability for multi-Vth design, and (iii) high device reliability. However, meeting all of these requirements simultaneously has been difficult with conventional high-k systems. In this work, we demonstrate that Hf/Zr-based gate stacks quantitatively satisfy these conditions. After a 700 C N2 anneal, the HZH superlattice achieves an EOT of 7.3 A, lower than conventional HfO2-only stacks (8.5 A) while maintaining comparable leakage. Embedding a 3 A Al2O3 dipole within an HfO2/ZrO2/HfO2 superlattice (HZHA) breaks the conventional dipole trade-off, achieving an EOT of 8.4 A, lower than the 9.0 A of a standard HfO2/Al2O3 stack, while providing a flatband voltage shift greater than 200 mV, thereby enabling multi-Vth tuning without compromising scaling. Furthermore, under -2 V negative-bias temperature stress at 125 C for 100 s, HZHA and HA exhibit comparable flatband voltage drifts of 87 mV and 97 mV, respectively, confirming that strong Vth tunability and sub-nanometer EOT can be achieved without compromising stability. In addition to these quantitative advances, this study reveals previously unreported physical insights into dipole behavior and interfacial diffusion in ultrathin Hf/Zr multilayers. These results establish HZHA as an RMG-compatible, Vth-tunable, low-EOT dielectric platform capable of supporting logic scaling beyond the 1 nm frontier. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_22505 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS Song, Taeyoung Kang, Sanghyun Kuo, Yu Hsin Chen, Jiayi Fernandes, Lance Afroze, Nashrah Tian, Mengkun Baac, Hyoung Won Shin, Changhwan Khan, Asif Islam Mesoscale and Nanoscale Physics Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibility with RMG-like high-temperature processing, (ii) sufficient Vth tunability for multi-Vth design, and (iii) high device reliability. However, meeting all of these requirements simultaneously has been difficult with conventional high-k systems. In this work, we demonstrate that Hf/Zr-based gate stacks quantitatively satisfy these conditions. After a 700 C N2 anneal, the HZH superlattice achieves an EOT of 7.3 A, lower than conventional HfO2-only stacks (8.5 A) while maintaining comparable leakage. Embedding a 3 A Al2O3 dipole within an HfO2/ZrO2/HfO2 superlattice (HZHA) breaks the conventional dipole trade-off, achieving an EOT of 8.4 A, lower than the 9.0 A of a standard HfO2/Al2O3 stack, while providing a flatband voltage shift greater than 200 mV, thereby enabling multi-Vth tuning without compromising scaling. Furthermore, under -2 V negative-bias temperature stress at 125 C for 100 s, HZHA and HA exhibit comparable flatband voltage drifts of 87 mV and 97 mV, respectively, confirming that strong Vth tunability and sub-nanometer EOT can be achieved without compromising stability. In addition to these quantitative advances, this study reveals previously unreported physical insights into dipole behavior and interfacial diffusion in ultrathin Hf/Zr multilayers. These results establish HZHA as an RMG-compatible, Vth-tunable, low-EOT dielectric platform capable of supporting logic scaling beyond the 1 nm frontier. |
| title | Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2512.22505 |