Saved in:
| Main Authors: | Orfao, B., Daher, M. Abou, Bouillaud, H., Roelens, Y., Prystawko, P., Kucharski, R., Bockowski, M., Zaknoune, M. |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2601.05958 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)
by: Dub, M., et al.
Published: (2025)
Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
by: Dub, M., et al.
Published: (2025)
by: Dub, M., et al.
Published: (2025)
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)
by: Maciej Kamiński, et al.
Published: (2024)
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)
by: Matys, Maciej, et al.
Published: (2024)
Effect of GaN substrate thickness on the optical field of InGaN laser diodes
by: J. A. Martín
Published: (2018)
by: J. A. Martín
Published: (2018)
Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices
by: Oskar Sadowski, et al.
Published: (2024)
by: Oskar Sadowski, et al.
Published: (2024)
Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices
by: Jarosław Tarenko, et al.
Published: (2024)
by: Jarosław Tarenko, et al.
Published: (2024)
Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)
by: Yongkun Sin, et al.
Published: (2025)
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
by: Rehman, A., et al.
Published: (2026)
by: Rehman, A., et al.
Published: (2026)
Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
by: Moneta, J., et al.
Published: (2024)
by: Moneta, J., et al.
Published: (2024)
Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
by: Dong Sing Wuu
Published: (1999)
by: Dong Sing Wuu
Published: (1999)
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
by: Cao, Can, et al.
Published: (2026)
by: Cao, Can, et al.
Published: (2026)
Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
by: J.B. Rojas-Trigos
Published: (2016)
by: J.B. Rojas-Trigos
Published: (2016)
Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
by: Wierzbicka, Aleksandra, et al.
Published: (2025)
Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
by: Kawka, Karol, et al.
Published: (2025)
by: Kawka, Karol, et al.
Published: (2025)
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
by: Cardinael, Pieter, et al.
Published: (2024)
by: Cardinael, Pieter, et al.
Published: (2024)
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)
by: Adamantia Logotheti, et al.
Published: (2024)
Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters
by: Dalla, Nilesh, et al.
Published: (2026)
by: Dalla, Nilesh, et al.
Published: (2026)
Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)
by: Yuanlei Zhang, et al.
Published: (2024)
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
by: Kruszewski, Piotr, et al.
Published: (2025)
by: Kruszewski, Piotr, et al.
Published: (2025)
Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
by: Hu, Chenxi, et al.
Published: (2025)
by: Hu, Chenxi, et al.
Published: (2025)
Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
by: Amer Bassal, et al.
Published: (2025)
by: Amer Bassal, et al.
Published: (2025)
Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering
by: D. M. G. Leite
Published: (2006)
by: D. M. G. Leite
Published: (2006)
UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode
by: Boukhicha, Mohamed, et al.
Published: (2024)
by: Boukhicha, Mohamed, et al.
Published: (2024)
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
by: Zettler, J. K., et al.
Published: (2024)
by: Zettler, J. K., et al.
Published: (2024)
Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
by: Dalla, Nilesh, et al.
Published: (2025)
by: Dalla, Nilesh, et al.
Published: (2025)
Transición electrónica fundamental en pozos cuánticos GaN/InGaN/GaN con estructura de zincblenda
by: H. Hernández-Cocoletzi
Published: (2006)
by: H. Hernández-Cocoletzi
Published: (2006)
Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)
by: Date, Mihir, et al.
Published: (2017)
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
by: Zhou, Guangnan, et al.
Published: (2021)
by: Zhou, Guangnan, et al.
Published: (2021)
Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation
by: Hang Chen, et al.
Published: (2024)
by: Hang Chen, et al.
Published: (2024)
Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
by: Zijun Lin, et al.
Published: (2026)
by: Zijun Lin, et al.
Published: (2026)
Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
by: Fernàndez-Garrido, Sergio, et al.
Published: (2024)
by: Fernàndez-Garrido, Sergio, et al.
Published: (2024)
Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)
by: Chang, Chuan F. C., et al.
Published: (2025)
Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure
by: Méchin, Loïc, et al.
Published: (2025)
by: Méchin, Loïc, et al.
Published: (2025)
Porous GaN Nanopyramids: Advancing Beyond Conventional Nanostructures for High‐Brightness InGaN/GaN Quantum Wells Emission
by: Hamza Thaalbi, et al.
Published: (2024)
by: Hamza Thaalbi, et al.
Published: (2024)
Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers
by: Kenji Iso, et al.
Published: (2025)
by: Kenji Iso, et al.
Published: (2025)
Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN
by: A. M. Santos
Published: (2004)
by: A. M. Santos
Published: (2004)
Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)
by: Tomoharu Sugino, et al.
Published: (2024)
Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
by: Khisameeva, A. R., et al.
Published: (2025)
by: Khisameeva, A. R., et al.
Published: (2025)
Similar Items
-
Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025) -
Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
by: Dub, M., et al.
Published: (2025) -
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024) -
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024) -
Effect of GaN substrate thickness on the optical field of InGaN laser diodes
by: J. A. Martín
Published: (2018)