Choudhary, Y., & Adegbija, T. (2026). Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories.
Chicago Style (17th ed.) CitationChoudhary, Yousuf, and Tosiron Adegbija. Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories. 2026.
MLA (9th ed.) CitationChoudhary, Yousuf, and Tosiron Adegbija. Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories. 2026.
Warning: These citations may not always be 100% accurate.