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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.11819 |
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| _version_ | 1866910050492088320 |
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| author | Guo, Shujin Shi, Qing Guo, Deping Liu, Fei Kong, Xianghua Zhao, Yonghong Guo, Hong |
| author_facet | Guo, Shujin Shi, Qing Guo, Deping Liu, Fei Kong, Xianghua Zhao, Yonghong Guo, Hong |
| contents | The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or p-Metal-n stacks are challenged by Schottky barriers at the metal-semiconductor interface. In this work, a 2D WTe$_2$/HfS$_2$ heterojunction with type-III band alignment is proposed to be an excellent design of cold source and CSFET. The architecture has a high band-to-band transport mechanism by removing the detrimental Schottky barrier issues. Importantly, the proposed CSFET has the same channel barrier modulation principle as conventional MOSFET to enable a high on-state current. Using first-principles-based quantum transport modeling, we predict a very high $I_{\rm on}$/$I_{\rm off}$ ratio at $\sim$ 10$^{10}$, a low subthreshold swing below the thermal limit for a wide range of gate voltages, reaching as small as 41.3 mV/dec, at low source-drain bias $V_{DS}=0.3$ $\rm V$. These findings establish a design principles for next-generation low-power nanoelectronic switches leveraging 2D van der Waals heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_11819 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Cold source field-effect transistor with type-III band-aligned HfS$_2$/WTe$_2$ heterostructure Guo, Shujin Shi, Qing Guo, Deping Liu, Fei Kong, Xianghua Zhao, Yonghong Guo, Hong Materials Science Mesoscale and Nanoscale Physics The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or p-Metal-n stacks are challenged by Schottky barriers at the metal-semiconductor interface. In this work, a 2D WTe$_2$/HfS$_2$ heterojunction with type-III band alignment is proposed to be an excellent design of cold source and CSFET. The architecture has a high band-to-band transport mechanism by removing the detrimental Schottky barrier issues. Importantly, the proposed CSFET has the same channel barrier modulation principle as conventional MOSFET to enable a high on-state current. Using first-principles-based quantum transport modeling, we predict a very high $I_{\rm on}$/$I_{\rm off}$ ratio at $\sim$ 10$^{10}$, a low subthreshold swing below the thermal limit for a wide range of gate voltages, reaching as small as 41.3 mV/dec, at low source-drain bias $V_{DS}=0.3$ $\rm V$. These findings establish a design principles for next-generation low-power nanoelectronic switches leveraging 2D van der Waals heterostructures. |
| title | Cold source field-effect transistor with type-III band-aligned HfS$_2$/WTe$_2$ heterostructure |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.11819 |