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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.16589 |
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| _version_ | 1866908894080532480 |
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| author | Isometsä, Joonas Bieleviciute, Auguste Liu, Xiaolong Vähänissi, Ville Savin, Hele |
| author_facet | Isometsä, Joonas Bieleviciute, Auguste Liu, Xiaolong Vähänissi, Ville Savin, Hele |
| contents | Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of state-of-the-art SiC UV detectors remains limited due to high reflectance losses, even with the use of anti-reflection coatings. Here, we develop a reactive ion etching process for nanostructuring SiC to eliminate the reflectance losses. The process is based on consecutive oxidation and etching cycles. Consequently, a reflectance below 0.5% is achieved from deep UV (200 nm) to close to the SiC cut-off (~360 nm). The nanostructures are effective even at large incident angles as the reflectance remains practically unchanged up to 60 degrees. Furthermore, it is confirmed that the process consumes only ~1 um of SiC and is compatible with Al2O3 masking, thereby facilitating straightforward integration into device fabrication. The developed cyclical etching process could also prove useful for SiC etching in general. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_16589 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Nanostructuring SiC by sequential plasma oxidation and reactive ion etching Isometsä, Joonas Bieleviciute, Auguste Liu, Xiaolong Vähänissi, Ville Savin, Hele Applied Physics Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of state-of-the-art SiC UV detectors remains limited due to high reflectance losses, even with the use of anti-reflection coatings. Here, we develop a reactive ion etching process for nanostructuring SiC to eliminate the reflectance losses. The process is based on consecutive oxidation and etching cycles. Consequently, a reflectance below 0.5% is achieved from deep UV (200 nm) to close to the SiC cut-off (~360 nm). The nanostructures are effective even at large incident angles as the reflectance remains practically unchanged up to 60 degrees. Furthermore, it is confirmed that the process consumes only ~1 um of SiC and is compatible with Al2O3 masking, thereby facilitating straightforward integration into device fabrication. The developed cyclical etching process could also prove useful for SiC etching in general. |
| title | Nanostructuring SiC by sequential plasma oxidation and reactive ion etching |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2603.16589 |