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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.23341 |
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| _version_ | 1866918406732644352 |
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| author | Cheng, C. W. Smith, J. Mashooq, K. Solomon, P. Watters, R. Philicelli, T. Piatek, D. Lavoie, C. Hopstaken, M. Gignac, L. Khan, B. BrightSky, M. Gionta, G. Hashemi, P. Narayanan, V. Frank, M. M. |
| author_facet | Cheng, C. W. Smith, J. Mashooq, K. Solomon, P. Watters, R. Philicelli, T. Piatek, D. Lavoie, C. Hopstaken, M. Gignac, L. Khan, B. BrightSky, M. Gionta, G. Hashemi, P. Narayanan, V. Frank, M. M. |
| contents | A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_23341 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping Cheng, C. W. Smith, J. Mashooq, K. Solomon, P. Watters, R. Philicelli, T. Piatek, D. Lavoie, C. Hopstaken, M. Gignac, L. Khan, B. BrightSky, M. Gionta, G. Hashemi, P. Narayanan, V. Frank, M. M. Materials Science A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation. |
| title | Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.23341 |