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Bibliographic Details
Main Authors:	Cheng, C. W., Smith, J., Mashooq, K., Solomon, P., Watters, R., Philicelli, T., Piatek, D., Lavoie, C., Hopstaken, M., Gignac, L., Khan, B., BrightSky, M., Gionta, G., Hashemi, P., Narayanan, V., Frank, M. M.
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	https://arxiv.org/abs/2603.23341
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Table of Contents:

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation.

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