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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.28180 |
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| _version_ | 1866908920626282496 |
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| author | Tran, Duc-Duy Mannequin, Cedric Donatini, Fabrice Sasaki, Masahiro Gheeraert, Etienne |
| author_facet | Tran, Duc-Duy Mannequin, Cedric Donatini, Fabrice Sasaki, Masahiro Gheeraert, Etienne |
| contents | We report a direct, maskless electron beam-induced etching (EBIE) process for diamond in air, enabling high-precision patterning without lithography or plasma processing. Through a comprehensive analysis of electron-gas, electron-diamond, and gas-surface interactions in the SEM environment, we demonstrate that etching is predominantly governed by low-energy secondary electrons, which drive gas dissociation and radical generation. The resulting oxygen- and nitrogen-based radicals chemisorb on the diamond surface, form volatile carbon-containing species, and desorb under continued electron irradiation, enabling controlled material removal. The process exhibits two distinct regimes: a molecule-limited regime governed by gas flux and an electron-limited regime controlled by current density. Etch depths up to 212 nm and lateral resolution down to 200 nm are achieved. Time-dependent anisotropy is observed, with (100) surfaces transitioning to (111)-faceted morphologies, enhancing etch yield. These results establish a general secondary electron-driven mechanism for EBIE in gas environments, providing a maskless, damage-free nanofabrication route for diamond semiconductor and other chemically inert materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_28180 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Maskless Electron Beam-Induced Etching of Diamond in Air: A Secondary Electron-Driven Mechanism Tran, Duc-Duy Mannequin, Cedric Donatini, Fabrice Sasaki, Masahiro Gheeraert, Etienne Materials Science We report a direct, maskless electron beam-induced etching (EBIE) process for diamond in air, enabling high-precision patterning without lithography or plasma processing. Through a comprehensive analysis of electron-gas, electron-diamond, and gas-surface interactions in the SEM environment, we demonstrate that etching is predominantly governed by low-energy secondary electrons, which drive gas dissociation and radical generation. The resulting oxygen- and nitrogen-based radicals chemisorb on the diamond surface, form volatile carbon-containing species, and desorb under continued electron irradiation, enabling controlled material removal. The process exhibits two distinct regimes: a molecule-limited regime governed by gas flux and an electron-limited regime controlled by current density. Etch depths up to 212 nm and lateral resolution down to 200 nm are achieved. Time-dependent anisotropy is observed, with (100) surfaces transitioning to (111)-faceted morphologies, enhancing etch yield. These results establish a general secondary electron-driven mechanism for EBIE in gas environments, providing a maskless, damage-free nanofabrication route for diamond semiconductor and other chemically inert materials. |
| title | Maskless Electron Beam-Induced Etching of Diamond in Air: A Secondary Electron-Driven Mechanism |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.28180 |