Gogova, D., Tran, D., Stanishev, V., Shafizadeh, D., Hsiao, C. -., Kim, M., . . . Darakchieva, V. (2026). Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics.
Style de citation Chicago (17e éd.)Gogova, D., et al. Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics. 2026.
Style de citation MLA (9e éd.)Gogova, D., et al. Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics. 2026.
Attention : ces citations peuvent ne pas être correctes à 100%.