Gogova, D., Tran, D., Stanishev, V., Shafizadeh, D., Hsiao, C. -., Kim, M., . . . Darakchieva, V. (2026). Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics.
Citazione stile Chigago Style (17a edizione)Gogova, D., et al. Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics. 2026.
Citatione MLA (9a ed.)Gogova, D., et al. Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics. 2026.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.