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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.04508 |
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| _version_ | 1866910105659768832 |
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| author | Gogova, D. Tran, D. Stanishev, V. Shafizadeh, D. Hsiao, C. -L. Kim, M. Pécz, B. Kovács, A. Frey, K. Sulyok, A. Singh, N. K. Febvrier, A. Le Eklund, P. Darakchieva, V. |
| author_facet | Gogova, D. Tran, D. Stanishev, V. Shafizadeh, D. Hsiao, C. -L. Kim, M. Pécz, B. Kovács, A. Frey, K. Sulyok, A. Singh, N. K. Febvrier, A. Le Eklund, P. Darakchieva, V. |
| contents | Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing expensive Ga-based alloys in photovoltaics and green-gap optoelectronics. In this work, epitaxial growth of MgSnN2 layers on 4H-SiC(0001) substrates by direct current magnetron sputtering is demonstrated. Mg and Sn metal targets have been co-sputtered in nitrogen-containing atmosphere at growth temperatures up to 500 °C. X-ray diffraction and cross-sectional transmission electron microscopy confirm the MgSnN2 layers grow epitaxially in a wurtzite crystal structure, exhibiting the epitaxial relationships with the substrate: MgSnN2 [0001]//4H-SiC [0001] and MgSnN2 [10-10]//4H-SiC[10-10]. Improved crystalline quality is observed for higher deposition temperatures and near-stoichiometric composition, as evidenced by the narrowing of rocking curve linewidths. Optical characterization reveals high absorption coefficients (1e5 cm-1) in the visible spectrum, comparable to that of GaAs, highlighting the suitability of MgSnN2 for photovoltaic applications. A photoluminescence emission band at ~2.4 eV is detected, highly desirable for optoelectronic devices operating in the challenging green spectral region. These results establish MgSnN2 as an earth-abundant, environmentally friendly material, structurally compatible with III-nitrides, with potential for cost-efficient components in sustainable optoelectronics and photovoltaics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_04508 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics Gogova, D. Tran, D. Stanishev, V. Shafizadeh, D. Hsiao, C. -L. Kim, M. Pécz, B. Kovács, A. Frey, K. Sulyok, A. Singh, N. K. Febvrier, A. Le Eklund, P. Darakchieva, V. Materials Science Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing expensive Ga-based alloys in photovoltaics and green-gap optoelectronics. In this work, epitaxial growth of MgSnN2 layers on 4H-SiC(0001) substrates by direct current magnetron sputtering is demonstrated. Mg and Sn metal targets have been co-sputtered in nitrogen-containing atmosphere at growth temperatures up to 500 °C. X-ray diffraction and cross-sectional transmission electron microscopy confirm the MgSnN2 layers grow epitaxially in a wurtzite crystal structure, exhibiting the epitaxial relationships with the substrate: MgSnN2 [0001]//4H-SiC [0001] and MgSnN2 [10-10]//4H-SiC[10-10]. Improved crystalline quality is observed for higher deposition temperatures and near-stoichiometric composition, as evidenced by the narrowing of rocking curve linewidths. Optical characterization reveals high absorption coefficients (1e5 cm-1) in the visible spectrum, comparable to that of GaAs, highlighting the suitability of MgSnN2 for photovoltaic applications. A photoluminescence emission band at ~2.4 eV is detected, highly desirable for optoelectronic devices operating in the challenging green spectral region. These results establish MgSnN2 as an earth-abundant, environmentally friendly material, structurally compatible with III-nitrides, with potential for cost-efficient components in sustainable optoelectronics and photovoltaics. |
| title | Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.04508 |