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| Main Authors: | , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.15131 |
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| _version_ | 1866914480210837504 |
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| author | Xue, Renhao Yan, Ruizhan Chan, Mansun Liu, Xiwen |
| author_facet | Xue, Renhao Yan, Ruizhan Chan, Mansun Liu, Xiwen |
| contents | A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental improvements. This limitation fundamentally originates from the thickness-constrained switchable polarization and the intrinsic polarization ceiling of HfO2-based ferroelectrics. Here, we propose an all-ALD-grown vertical complementary FeRAM (VCF) architecture, in which the top and bottom stacked FeRAM cells maintain complementary polarization. This complementary dipole configuration converts the readout from a single-layer polarization response into a differential polarization summation, thereby amplifying the effective charge window without increasing the switching field of each individual layer or incurring area overhead. Viewed from top to bottom, an "up-down" polarization pair stores logic '1', whereas a "down-up" pair stores logic '0'. Using a complementary polarization write-read scheme, the VCF achieves an effective differential polarization above 100 uC/cm^2 and retains above 90 uC/cm^2 after 1e10 switching cycles without electrical breakdown. Robust retention (longer than 1e4 s at 85 degC) and strong disturb immunity are demonstrated, with an effective differential polarization above 80 uC/cm^2 under a V/3 scheme after 1e6 disturb pulses. Array-level operation is validated in a 5 x 5 selector-free crosspoint array. The performance enhancement of the VCF arises from the co-optimization of the all-ALD-grown process, device architecture, and operation scheme, enabling high density, a wide memory window, and strong reliability for scalable FeRAM integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_15131 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles Xue, Renhao Yan, Ruizhan Chan, Mansun Liu, Xiwen Materials Science A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental improvements. This limitation fundamentally originates from the thickness-constrained switchable polarization and the intrinsic polarization ceiling of HfO2-based ferroelectrics. Here, we propose an all-ALD-grown vertical complementary FeRAM (VCF) architecture, in which the top and bottom stacked FeRAM cells maintain complementary polarization. This complementary dipole configuration converts the readout from a single-layer polarization response into a differential polarization summation, thereby amplifying the effective charge window without increasing the switching field of each individual layer or incurring area overhead. Viewed from top to bottom, an "up-down" polarization pair stores logic '1', whereas a "down-up" pair stores logic '0'. Using a complementary polarization write-read scheme, the VCF achieves an effective differential polarization above 100 uC/cm^2 and retains above 90 uC/cm^2 after 1e10 switching cycles without electrical breakdown. Robust retention (longer than 1e4 s at 85 degC) and strong disturb immunity are demonstrated, with an effective differential polarization above 80 uC/cm^2 under a V/3 scheme after 1e6 disturb pulses. Array-level operation is validated in a 5 x 5 selector-free crosspoint array. The performance enhancement of the VCF arises from the co-optimization of the all-ALD-grown process, device architecture, and operation scheme, enabling high density, a wide memory window, and strong reliability for scalable FeRAM integration. |
| title | Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.15131 |