Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
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arXiv
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| Autori principali: | , , , , , , , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866913040875651072 |
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| author | Corre, Brieg Le Grenèche, Clothilde Bernard, Rozenn Rohel, Tony Létoublon, Antoine Khelifi, Wijden Pouliquen, Julie Le Grisard, Arnaud Combrié, Sylvain Gérard, Bruno Harouri, Abdelmounaim Gratiet, Luc Le Beaudoin, Grégoire Pantzas, Konstantinos Sagnes, Isabelle Skibitzki, Oliver Patriarche, Gilles Cornet, Charles Léger, Yoan |
| author_facet | Corre, Brieg Le Grenèche, Clothilde Bernard, Rozenn Rohel, Tony Létoublon, Antoine Khelifi, Wijden Pouliquen, Julie Le Grisard, Arnaud Combrié, Sylvain Gérard, Bruno Harouri, Abdelmounaim Gratiet, Luc Le Beaudoin, Grégoire Pantzas, Konstantinos Sagnes, Isabelle Skibitzki, Oliver Patriarche, Gilles Cornet, Charles Léger, Yoan |
| contents | Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_15812 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy Corre, Brieg Le Grenèche, Clothilde Bernard, Rozenn Rohel, Tony Létoublon, Antoine Khelifi, Wijden Pouliquen, Julie Le Grisard, Arnaud Combrié, Sylvain Gérard, Bruno Harouri, Abdelmounaim Gratiet, Luc Le Beaudoin, Grégoire Pantzas, Konstantinos Sagnes, Isabelle Skibitzki, Oliver Patriarche, Gilles Cornet, Charles Léger, Yoan Materials Science Applied Physics Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries. |
| title | Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2604.15812 |