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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.22086 |
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Table of Contents:
- Surface oxides contribute to losses in superconducting transmon devices resulting in degraded performance. We explore the use of the damascene process to replace the sidewall native oxide of a device with a metal/substrate interface. We simulate sidewall oxidation by burying an oxide layer during fabrication. We observe a modest improvement between the two types of devices, which is suggestive of a reduction in the surface participation ratio.