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Bibliographic Details
Main Authors: Bhatia, Ekta, Du, Yingge, Koirala, Krishna P, Kow, Chung, Liu, Mingzhao, Macy, Juan, Nanayakkara, Tharanga R., Ponce, Francisco, Rao, Satyavolu S. Papa, Rebar, Drew J., Sushko, Peter V., VanDevender, Brent A, Wang, Chongmin, Warner, Marvin G., Xiao, Zhihao
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2604.22086
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Table of Contents:
  • Surface oxides contribute to losses in superconducting transmon devices resulting in degraded performance. We explore the use of the damascene process to replace the sidewall native oxide of a device with a metal/substrate interface. We simulate sidewall oxidation by burying an oxide layer during fabrication. We observe a modest improvement between the two types of devices, which is suggestive of a reduction in the surface participation ratio.