Leroch, S., Stella, R., Hössinger, A., & Filipovic, L. (2026). The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers.
Cita Chicago Style (17a ed.)Leroch, Sabine, Robert Stella, Andreas Hössinger, y Lado Filipovic. The Influence of Implantation Conditions on Dopant Activation in Al-implanted 4H-SiC: A MD Study Applying an Al Potential Fitted to DFT Barriers. 2026.
Cita MLA (9a ed.)Leroch, Sabine, et al. The Influence of Implantation Conditions on Dopant Activation in Al-implanted 4H-SiC: A MD Study Applying an Al Potential Fitted to DFT Barriers. 2026.
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