APA (7th ed.) Citation

Yang, X., Zhang, S., Wei, K., Wang, X., Liu, X., Furuhashi, I., & Pristovsek, M. (2026). Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios.

Chicago Style (17th ed.) Citation

Yang, Xu, Sheng Zhang, Ke Wei, Xinhua Wang, Xinyu Liu, Itsuki Furuhashi, and Markus Pristovsek. Depletion-mode N-polar AlN-based High Electron Mobility Transistors with Improved On/off Ratios. 2026.

MLA (9th ed.) Citation

Yang, Xu, et al. Depletion-mode N-polar AlN-based High Electron Mobility Transistors with Improved On/off Ratios. 2026.