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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2605.14329 |
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| _version_ | 1866917494312140800 |
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| author | Yang, Xu Zhang, Sheng Wei, Ke Wang, Xinhua Liu, Xinyu Furuhashi, Itsuki Pristovsek, Markus |
| author_facet | Yang, Xu Zhang, Sheng Wei, Ke Wang, Xinhua Liu, Xinyu Furuhashi, Itsuki Pristovsek, Markus |
| contents | We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off ratios as high as 10,000, much higher than previously reported N-polar AlN-based HEMTs. The high on/off ratio is attributed to the use of an abrupt AlN/GaN heterostructure with a dedicated AlN transition layer, together with improved gate leakage. The high frequency properties as well as the on-resistance of ~20 Ohm mm are all limited by the 2000 Ohm/square sheet resistance of the channel layer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_14329 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios Yang, Xu Zhang, Sheng Wei, Ke Wang, Xinhua Liu, Xinyu Furuhashi, Itsuki Pristovsek, Markus Materials Science We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off ratios as high as 10,000, much higher than previously reported N-polar AlN-based HEMTs. The high on/off ratio is attributed to the use of an abrupt AlN/GaN heterostructure with a dedicated AlN transition layer, together with improved gate leakage. The high frequency properties as well as the on-resistance of ~20 Ohm mm are all limited by the 2000 Ohm/square sheet resistance of the channel layer. |
| title | Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.14329 |