Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.16597 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910225343184896 |
|---|---|
| author | Julson, Dale Youngs, Mike Lowrey, Hannah Keltner, David Hossain, Tim Fullwood, Clayton |
| author_facet | Julson, Dale Youngs, Mike Lowrey, Hannah Keltner, David Hossain, Tim Fullwood, Clayton |
| contents | Building on the demonstrated sensitivity of the Heavy Ion Monitor on a Chip (HIMoC) presented in Part I of this work, we performed additional irradiation exposures using 24.8 MeV/u beams of $^{14}$N, $^{22}$Ne, and $^{40}$Ar at the Texas A&M University Cyclotron Institute. A novel simulation workflow was developed that couples the particle-transport toolkit Geant4 with the open-source TCAD simulator DEVSIM to model the heavy-ion-induced signal in HIMoC devices. The model represents energy deposition by primary heavy ions and secondary electrons as Gaussian charge-loss profiles that produce measurable threshold-voltage shifts in the device. Good agreement between simulated and experimental $ΔV_{\mathrm{th}}$ distributions was obtained. HIMoC was also shown to generate a signal that scales approximately linearly with a dose-like quantity proportional to ion fluence, LET, and active detector area. These results support HIMoC as a passive heavy-ion dosimeter and provide a framework for modeling the effects of radiation-induced charge loss in charge-trapping non-volatile memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_16597 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling Julson, Dale Youngs, Mike Lowrey, Hannah Keltner, David Hossain, Tim Fullwood, Clayton Instrumentation and Detectors Building on the demonstrated sensitivity of the Heavy Ion Monitor on a Chip (HIMoC) presented in Part I of this work, we performed additional irradiation exposures using 24.8 MeV/u beams of $^{14}$N, $^{22}$Ne, and $^{40}$Ar at the Texas A&M University Cyclotron Institute. A novel simulation workflow was developed that couples the particle-transport toolkit Geant4 with the open-source TCAD simulator DEVSIM to model the heavy-ion-induced signal in HIMoC devices. The model represents energy deposition by primary heavy ions and secondary electrons as Gaussian charge-loss profiles that produce measurable threshold-voltage shifts in the device. Good agreement between simulated and experimental $ΔV_{\mathrm{th}}$ distributions was obtained. HIMoC was also shown to generate a signal that scales approximately linearly with a dose-like quantity proportional to ion fluence, LET, and active detector area. These results support HIMoC as a passive heavy-ion dosimeter and provide a framework for modeling the effects of radiation-induced charge loss in charge-trapping non-volatile memory devices. |
| title | A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2605.16597 |