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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.16597 |
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Table of Contents:
- Building on the demonstrated sensitivity of the Heavy Ion Monitor on a Chip (HIMoC) presented in Part I of this work, we performed additional irradiation exposures using 24.8 MeV/u beams of $^{14}$N, $^{22}$Ne, and $^{40}$Ar at the Texas A&M University Cyclotron Institute. A novel simulation workflow was developed that couples the particle-transport toolkit Geant4 with the open-source TCAD simulator DEVSIM to model the heavy-ion-induced signal in HIMoC devices. The model represents energy deposition by primary heavy ions and secondary electrons as Gaussian charge-loss profiles that produce measurable threshold-voltage shifts in the device. Good agreement between simulated and experimental $ΔV_{\mathrm{th}}$ distributions was obtained. HIMoC was also shown to generate a signal that scales approximately linearly with a dose-like quantity proportional to ion fluence, LET, and active detector area. These results support HIMoC as a passive heavy-ion dosimeter and provide a framework for modeling the effects of radiation-induced charge loss in charge-trapping non-volatile memory devices.