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| Formato: | Artículo científico |
| Lenguaje: | en |
| Publicado: |
Sociedade Brasileira de Física
2006
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46436303 |
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- Modeling Chaotic Current Oscillations in Semi-Insulating GaAs with Rate-Equations of Impact Ionization and Field-Enhanced Trapping H.A. Albuquerque R. L. da Silva R. M. Rubinger A. G. de Oliveira G.M. Ribeiro W. N. Rodrigues Física, Astronomía y Matemáticas generation bifurcation diagrams recombination processes current oscillations in semiconductors We investigated the effect of adding the field-dependent recombination process, namely field-enhanced trapping,to the generation-recombination processes of charge carriers that model current oscillations in semiconductors.The main new features arising from this modification are identified in bifurcation diagrams with theelectric field as the control parameter. The characteristic of the bifurcation diagrams is a function of impurityenergy. Thus, we generated a set of bifurcation diagrams for a range of the impurity energy and applied bias.The energy dependence of the bifurcation diagrams is discussed considering the context of the competitionbetween the generation-recombination mechanisms impact ionization and field-enhanced trapping. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436303 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36