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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| Online Access: | https://www.redalyc.org/articulo.oa?id=46436563 |
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Table of Contents:
- Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique R. Bustamante J.H.D. da Silva J. Vilcarromero Física, Astronomía y Matemáticas RF Hydrogen Gallium arsenide magnetron sputtering We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphousgallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenatedfilms are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50),and dark conductivity of about 3.2 x 10¡5(W.cm)¡1. Hydrogen was incorporated in the films by the introductionof an electronically controlled H2 flux during deposition, keeping constant the other deposition parameters.It was observed that small hydrogen incorporation produces a great change in the structural properties of thefilms. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into theamorphous network. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436563 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3B Vol.36