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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Física A.C.
2007
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| Online Access: | https://www.redalyc.org/articulo.oa?id=57036163079 |
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Table of Contents:
- Fabrication and characterization of un-cooled micro-bolometers based on silicon germanium thin films obtained by low frequency plasma deposition M. Moreno A. Kosarev A. Torres Física, Astronomía y Matemáticas Germanium IR detectors plasma enhanced chemical vapor deposition We report the study of a fabrication process and characterization of un-cooled micro-bolometers based on silicon germanium thin filmsdeposited by low frequency PE CVD technique at low temperature and fully compatible with the IC fabrication technology. Surface micro-machining techniques were used for the micro-bolometer fabrication onto a silicon wafer. The a-SixGe1°x:H thermo-sensing film usedin those devices have shown high activation energy providing high thermal coefficient of resistance and improved but still high resistance.We studied the effect on the electrical properties of the device when boron is incorporated in the a-SixGe1°x:H film. The temperaturedependence of conductivityæ(T), current-voltage characteristics I(U) and noise spectral density have been measured in order to characterizeand compare the performance of micro-bolometers with both types of films: a-SixGe1°x:H and a-GexBySiz:H. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57036163079 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.7 Vol.53