Gorbachev, A. Y. (2005). Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
Chicago Style (17th ed.) CitationGorbachev, A. Yu. Effects of In-situ Annealing Processes of GaAs(100) Surfaces on the Molecular Beam Epitaxial Growth of InAs Quantum Dots. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 2005.
MLA (9th ed.) CitationGorbachev, A. Yu. Effects of In-situ Annealing Processes of GaAs(100) Surfaces on the Molecular Beam Epitaxial Growth of InAs Quantum Dots. Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C, 2005.
Warning: These citations may not always be 100% accurate.