Analyse of the lateral surface generation in MOS structures
Fuente:
Universidad Nacional Autónoma de México
Resumen: In the measurements of the generation lifetime, using the method of Zerbst, an effective generation lifetime is measured. According to the model used, this parameter includes the real generation lifetime, surface generation velocity at the depleted lateral space charge region and the diamet...
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| Main Authors: | , , |
|---|---|
| Format: | Artículo de Investigación |
| Language: | English |
| Published: |
Sociedad Mexicana de Física, A.C.
2004
Universidad Nacional Autónoma de México; Facultad de Ciencias |
| Subjects: | |
| Online Access: | |
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