High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Fuente: Wiley Open Access

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Bibliographic Details
Main Authors:	Meiyong Liao, Huanying Sun, Satoshi Koizumi
Format:	Artículo Open Access
Published:	Wiley 2024
Subjects:	Advanced Science
Online Access:	Acceder al recurso
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